Browsing by Author "Yuan, Wei-You"

Now showing 1 - 1 of 1

Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
(2015)
Lee, Yao-Jen
;
Hou, Fu-Ju
;
Chuang, Shang-Shiun
;
Hsueh, Fu-Kuo
;
Kao, Kuo-Hsing
We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond-shaped Ge and Ge0.9Si0.1 gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The proposed dry etching process involves three isotropic/anisotropic etching steps with different Cl-2/HBr ratios for forming the suspended diamond-shaped channel. Taking advantages of the GAA configuration, favorable carrier mobility of the {111} surface, nearly defect-free suspended channel, and improved dopant activation by incorporating Si, nFET and pFET with excellent performance have been demonstrated, including an I-on/I-off ratio exceeding 10(8), the highest ever reported for Ge-based pFETs.