Browsing by Author "Zan, Hsiao Wen"

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Characteristic Determination for Solid State Devices with Evolutionary Computation: A Case Study
(2007)
Hung, Ping-Chu
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Chen, Ying-ping
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Zan, Hsiao Wen
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資訊工程學系
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Department of Computer Science
In this paper, we develop a new optimization framework that consists of the extended compact genetic algorithm (ECGA) and split-on-demand (SoD) to tackle the characteristic determination problem for solid state devices. As most decision variables of characteristic determination problems are real numbers due to the modeling of physical phenomena, and ECGA is designed for handling discrete-type problems, a specific mechanism to transform the variable types of the two ends is in order. In the proposed framework, ECGA is used as an optimization engine, and SoD is adopted as the interface between the engine and the problem. Moreover, instead of one mathematical model with various parameters. characteristic determination is in fact a set of problems of which the mathematical formulations may be very different. Therefore, in this study, we employ the proposed framework oil three study cases to demonstrate that the technique proposed in the domain of evolutionary computation can provide not only the high quality optimization results but also the flexibility to handle problems of different formulations.
Making Optical MEMS Sensors more compact using Organic Light Sources and Detectors
(2014-01-01)
Sauter, Thilo
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Hortschitz, Wilfried
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Steiner, Harald
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Stifter, Michael
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Chiao, Hsin
Vibration and displacement sensors need to be compact for many applications in automation or consumer electronics, and microelectromechanical structures are a convenient way to implement such sensors. For these MEMS devices, optical readout methods have proven to be superior to capacitive or piezoresistive strategies in terms of sensitivity as well as noise and interference immunity, however the integration of light sources and detectors is not easily possible. This paper presents an approach to use organic optoelectronic devices for the readout. OLED and OPD (organic photo detector) are structured on the glass substrate and cover encapsulating the MEMS devices, allowing for a tightly integrated sensor based on vertical light flux modulation by a horizontally moving proof mass. The paper describes the principle sensor structure as well as the fabrication of suitable organic devices. First test results show that the approach is feasible.
METHOD FOR MANUFACTURING SELF-ALIGNED THIN-FILM TRANSISTOR AND STRUCTURE THEREOF
(2011-01-06)
Chou, Cheng Wei
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Zan, Hsiao Wen
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Tsai, Chuang Chuang
A method for manufacturing a self-aligned thin-film transistor (TFT) is described. Firstly, an oxide gate, a dielectric layer, and a photoresist layer are deposited on a first surface of a transparent substrate in sequence. Then, an ultraviolet light is irradiated on a second surface of the substrate opposite to the first surface to expose the photoresist layer, in which a gate manufactured by the oxide gate serves as a mask, and absorbs the ultraviolet light irradiated on the photoresist layer corresponding to the oxide gate. Then, the exposed photoresist layer is removed, and a transparent conductive layer is deposited on the unexposed photoresist layer and the dielectric layer. Then, a patterning process is executed on the transparent conductive layer to form a source and a drain, and an active layer is formed to cover the source, the drain, and the dielectric layer, so as to finish a self-aligned TFT structure.
Modeling of the parasitic resistance effect in poly-Si TFTs with LDD structure
(2005)
Kao, Shih-Chin
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Zan, Hsiao Wen
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Chen, Shih-Ching
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光電工程學系
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Department of Photonics
In this study, the model of poly-Si TFTs with LDD structure had been proposed. Firstly, parasitic resistance parameters were extracted from devices with various channel length and LDD length. Then, an accurate I-V model was constructed by combining basic TFT model (RPI model) and the parasitic resistance effects. The model had been verified for devices with channel length larger than 6 mu m. The transconductance behavior in both linear region and saturation region are also well explained by our proposed model.
New patterning method for pentacene-based TFTs by using AIN dielectric and O-2 plasma treatment
(2007)
Zan, Hsiao Wen
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Tu, Ting Yuan
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Chou, Cheng Wei
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Yen, Kuo Hsi
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Wang, Chung Hwa
Pentacene patterning on aluminum nitride (AIN) dielectric by adjusting the surface energy was discussed. By using conventional photo resist to protect the channel area, the surface energy of the remaining area was altered by the 02 plasma treatment. Then, after pentacene deposition, water dipping was used to remove the pentacene on 02 plasma-treated area. The adhesion energy, intrusion energy were analyzed to explain the mechanism of this patterning process. The variation of intrusion energy due to different surface energies was found to be the key issue for successful pentacene patterning. AIN-OTFTs with the proposed pentacene patterning technology were also demonstrated.
Surface energy and adhesion energy of solution-based patterning in organic thin film transistors
(2008-02-29)
Zan, Hsiao Wen
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Chou, Cheng-Wei
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Yen, Kuo-Hsi
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光電工程學系
;
顯示科技研究所
This study elucidates the patterning of pentacene by adjusting its surface energy. The surface energy was modified by self-assembled monolayer treatment and exposure to ultra-violet (UV) light through a quartz-glass mask. Then, following pentacene deposition, dipping in water was used to remove pentacene from the UV-exposed area. The adhesion energy and the intrusion energy were analyzed to determine the mechanism of this patterning process. The variation of the intrusion energy with the surface energy was found to be the main issue in pentacene patterning. The characteristics of pentacene-organic thin film transistors were also measured to confirm the proposed method. (C) 2007 Elsevier B.V. All rights reserved.
The crystallization mechanism of poly-Si thin film using high-power Nd : YAG laser with Gaussian beam profile
(2007)
Zan, Hsiao Wen
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Huang, Chang Yu
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Saito, Kazuya
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Tamagawa, Kouichi
;
Chen, Jack
This paper studies the poly-Si crystallization mechanism under the high power (200 W) Nd:YAG solid state pulsed laser annealing system. It is found that the Gaussian-distributed laser beam profile successfully produce large super lateral growth process window. The devices in the SLG process window exhibit an electron field-effect mobility around 250 cm(2)/V.s and a threshold voltage lower than 1 V. The influence of a-Si film thickness and the laser scan pitch on the process window is also carefully investigated.