Browsing by Author "Zan Hsiao-Wen"

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Method for forming vertical type sensor
(2014-11-04)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
METHOD FOR FORMING VERTICAL TYPE SENSOR
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
Method for manufacturing organic electronic component having salt compound
(2014-05-13)
Meng Hsin-Fei
;
Lin Hao-Wu
;
Horng Sheng-Fu
;
Zan Hsiao-Wen
;
Chang Hao-Wen
A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.
METHOD FOR MANUFACTURING ORGANIC ELECTRONIC COMPONENT HAVING SLAT COMPOUND
(2014-02-13)
MENG Hsin-Fei
;
Lin Hao-Wu
;
Horng Sheng-Fu
;
Zan Hsiao-Wen
;
Chang Hao-Wen
A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.
Method for preparing organic light emitting diode and device thereof
(2011-06-30)
Hsu Chain-Shu
;
Meng Hsin-Fei
;
Horng Sheng-Fu
;
Zan Hsiao-Wen
;
Tseng Hsin-Rong
A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components.
Nanoball solution coating method and applications thereof
(2014-06-10)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Chao Yen-Chu
;
Wang Kai-Ruei
;
Hsu Yung-Hsuan
The present invention discloses a nanoball solution coating method and applications thereof. The method comprises steps: using a scraper to coat a nanoball solution on a substrate to attach a plurality of nanoballs on the substrate; flushing or flowing through the substrate with a heated volatile solution to suspend the nanoballs unattached to the substrate in the volatile solution; and using the scraper to scrape off the volatile solution carrying the suspended nanoballs, whereby is simplified the process to coat nanoballs. The method can be used to fabricate nanoporous films, organic vertical transistors, and large-area elements and favors mass production.
Self-aligned top-gate thin film transistors and method for fabricating same
(2012-01-26)
Zan Hsiao-Wen
;
Chen Wei-Tsung
;
Chou Cheng-Wei
;
Tsai Chuang-Chuang
A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device.
SOLAR CELL AND FABRICATION METHOD THEREOF
(2012-12-27)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Horng Sheng-Fu
;
Chao Yu-Chiang
;
Lin Yuan-Pai
A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.
Vertical electro-optical component and method of fabricating the same
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2012-09-20)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME
(2011-11-24)
Meng Hsin-Fei
;
Zan Hsiao-Wen
;
Chao Yu-Chiang
A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.
Vertical type sensor
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
VERTICAL TYPE SENSOR
(2012-04-12)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Dai Ming-Zhi
;
Chao Yu-Chiang
The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.