Browsing by Author "Zeng, Yu-Jia"

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Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering
(1970-01-01)
Wang, Changan
;
Chang, Ching-Hao
;
Herklotz, Andreas
;
Chen, Chao
;
Ganss, Fabian
The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultrathin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study, THE is observed in 60-nm-thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated with the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronic devices.
Tunable disorder and localization in the rare-earth nickelates
(2019-05-02)
Wang, Changan
;
Chang, Ching-Hao
;
Huang, Angus
;
Wang, Pei-Chun
;
Wu, Ping-Chun
We demonstrate that transport in metallic rare-earth nickelates can be engineered by directly tuning the electronic mean free path. Using irradiation as a tool to induce disorder, we drive this system from a metallic phase into an Anderson insulator. This proceeds via an intermediate regime which shows a thermal crossover from insulating to metallic behavior. We argue that this phase falls within the paradigm of weak localization in three dimensions. We develop a theoretical model for the temperature dependence of resistivity which shows good agreement with our data. The three-dimensional weak localization picture is supported by magnetoconductivity, which scales as similar to B-2 up to several tesla. Interestingly, our data indicate that this phase lies in the Mott-Ioffe-Regel regime with the mean free path approaching the lattice constant. Upon further increasing disorder, the charge carriers are localized, leading to insulating behavior at all temperatures. Our results show that irradiation provides a "clean" tuning knob for the mean free path, without altering other system parameters. This suggests promising directions for studies of Anderson localization.