Browsing by Author "Zeng, Z. M."

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Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency
(2006-11-13)
Chien, W. C.
;
Lo, C. K.
;
Hsieh, L. C.
;
Yao, Y. D.
;
Han, X. F.
The magnetoimpedance effect was employed to study magnetotunneling junction (MTJ) with the structure of Ru(5 nm)/Cu(10 nm)/Ru(5 nm)/IrMn(10 nm)/CoFeB(4 nm)/Al(1.2 nm)-oxide/CoFeB(4 nm)/Ru(5 nm). A huge change of more than +/- 17 000% was observed in the imaginary part of the impedance between the magnetically parallel and antiparallel states of the MTJ. The inverse behavior of the magnetoimpedance (MI) loop occurs beyond 21.1 MHz; however, the normal MI at low frequency and the inverse MI at high frequency exhibit the same magnetization reversal as checked by the Kerr effect. The reversal in MI was due to the dominance of magnetocapacitance at high frequency. (c) 2006 American Institute of Physics.
High frequency impedance inverse in MTJ junction
(2007-03-01)
Hsieh, L. C.
;
Huang, Y. W.
;
Han, X. F.
;
Zeng, Z. M.
;
Chien, W. C.
The magnetoimpedance effect of magnetic tunnel junction ( MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5MHz switches to - 11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor- Inductor series circuit and Capacitor part. (c) 2006 Elsevier B. V. All rights reserved.