Browsing by Author "Zhan, Runze"

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Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
(2013-12-01)
Zhan, Runze
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Dong, Chengyuan
;
Liu, Po-Tsun
;
Shieh, Han-Ping D.
;
光電工程學系
The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer. (C) 2013 Elsevier Ltd. All rights reserved.
Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers
(2013-09-01)
Zhan, Runze
;
Dong, Chengyuan
;
Yang, Bo-Ru
;
Shieh, Han-Ping D.
;
光電工程學系
A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physics
Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions
(2016-11)
Li, GongTan
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Zhan, Runze
;
Yang, Bo-Ru
;
Liu, Chuan
;
Dong, ChengYuan
Instability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) remains an obstacle for commercialization. Here, we systematically discuss the effect of nitrogen incorporation on a-IGZO TFT stability and developed Ar/O-2/N-2 atmosphere to improve the stability under stressing in different conditions. Based on X-ray photoelectron spectrometer results, it is revealed that the positive gate bias stress (PGBS) stability is significantly improved due to microscopically passivated metal-oxygen bonds. Yet, the negative gate bias and light stress (NBLS) stability is seriously deteriorated with heavily nitrogen incorporation probably due to the bandgap narrowing effect. By optimizing a mixed O-2/N-2 atmosphere, the subgap states are finely tuned to afford optimal performance and stability. The developed IGZO TFTs exhibit mobility (12.67 cm(2)/Vs), small shift of threshold voltage under PGBS (reduced by 64% as compared with the pristine a-IGZO TFTs), and good negative gate bias stability and with NBLS stability as well.