Browsing by Author "Zhang, Jinxing"
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Item type:Item, A nanoscale shape memory oxide(2013-11-01) ;Zhang, Jinxing ;Ke, Xiaoxing ;Gou, Gaoyang ;Seidel, JanXiang, BinStimulus-responsive shape-memory materials have attracted tremendous research interests recently, with much effort focused on improving their mechanical actuation. Driven by the needs of nanoelectromechanical devices, materials with large mechanical strain, particularly at nanoscale level, are therefore desired. Here we report on the discovery of a large shape-memory effect in bismuth ferrite at the nanoscale. A maximum strain of up to similar to 14% and a large volumetric work density of similar to 600 +/- 90 J cm(-3) can be achieved in association with a martensitic-like phase transformation. With a single step, control of the phase transformation by thermal activation or electric field has been reversibly achieved without the assistance of external recovery stress. Although aspects such as hysteresis, microcracking and so on have to be taken into consideration for real devices, the large shape-memory effect in this oxide surpasses most alloys and, therefore, demonstrates itself as an extraordinary material for potential use in state-of-art nanosystems.Item type:Item, Directed assembly of nano-scale phase variants in highly strained BiFeO3 thin films(2012-09-15) ;Zhou, Jian ;Trassin, Morgan ;He, Qing ;Tamura, NobumichiKunz, MartinThe delicate balance between elastic energy and electrostatic energy in highly strained BiFeO3 (BFO) thin films results in complex mixed-phase patterns, which poses significant challenges for theoretical understanding and complicates the realization of its full potential in magnetoelectric, electromechanical, and photovoltaic devices. In this letter, we explore in-plane electric field induced phase transition in strain engineered BFO thin films and elucidate the mechanism behind the assembly behavior of complex nano-scale phase domains. Our approach enables deterministic control of phase variants with well-defined structures and orientation, paving the way for designing novel data storage devices based on mixed phase BFO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752395]