Browsing by Author "Zhang, Kai"

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High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
(2016-10-05)
Wang, Jingli
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Yao, Qian
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Huang, Chun-Wei
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Zou, Xuming
;
Liao, Lei
High-performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer
(2015-12-01)
Liao, Chongnan
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Zou, Xuming
;
Huang, Chun-Wei
;
Wang, Jingli
;
Zhang, Kai
AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with Y2O3 interlayer have been investigated to improve the interface quality. With the HfO2/Y2O3 stack gate dielectrics, the devices show a saturated drain current density of up to similar to 943 mA/mm. Meanwhile, the pulsed I-d-V-g measurement indicates interface traps are as low as 5.2 x 10(11) cm(-2), and the pulsed-IV measurement exhibits great resistance to current collapse. Furthermore, the devices also present good reliability under negative bias stress. Therefore, the interface engineering based on Y2O3 has a potential to open up a new avenue to high-performance AlGaN/GaN MOS-HEMTs.