Browsing by Author "Zhang, L."

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A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate-glass films with various ratios of methyl terminal and ethylene bridging groups
(2020-10-15)
Rasadujjaman, M.
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Wang, Y.
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Zhang, L.
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Naumov, S.
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Attallah, A. G.
Organosilicate-glass films with a varying ratio of terminal methyl and bridging ethylene groups are synthesized using 1,2-bis(trimethoxysilyl)ethane/methyltrimethoxysilane mixtures and sol-gel technology. The films are characterized by Fourier Transform Infrared spectroscopy, Ellipsometric Porosimetry and Positron Annihilation Spectroscopy. The hard bake at 400 degrees C generates the final pore structure, which depends on the curing environment. It is shown that ethylene bridge is destructed during the hard bake in the air via formation of peroxide radicals that form equivalent to SiOH during the transformation. Continuous hard bake leads to condensation of silanol groups and form a structure similar to the ordinary silica. The pore size of highly porous materials (>30%) is larger in air cured films. Destruction of the ethylene bridge makes the films matrix soft and micropores collapse due to the capillary forces during the template evaporation. It leads to the film shrinkage, increases the size of internal voids. The air cured samples showed better mechanical properties than N2 cured ones although in the last case ethylene bridging groups were preserved. The reason is that the collapse of micropores increase the internal density and creates more favorable condition for condensation of silanol groups.
Chromatic dispersion monitoring of 40-Gb/s RZ-DPSK and 80-Gb/s RZ-DQPSK data using cross-phase modulation in highly-nonlinear fiber and a simple power monitor
(2008-01-01)
Yang, J. -Y.
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Zhang, L.
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Wu, T.
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Wu, X.
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Christen, L. C.
We experimentally demonstrate an all-optical chromatic dispersion monitoring technique utilizing cross-phase modulation in highly-nonlinear fiber for 40-Gb/s RZ-DPSK. Maximum monitored power variation of 16.5-dB is achieved in the presence of up to 120-ps/nm chromatic dispersion. (C) 2008 Optical Society of America.
Thin-Silicon Injector (TSI): an All-Silicon Engineered Barrier, Highly Nonlinear Selector for High Density Resistive RAM Applications
(2015)
Govoreanu, B.
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Zhang, L.
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Crotti, D.
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Fan, Y. -S.
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Paraschiv, V.
We report on a novel Thin-Silicon Injector (TSI) selector concept with bidirectional operation for high density resistive switching memory. Model-based analysis shows how the current drive-nonlinearity trade-off can be broken by properly combining physical material properties to enable decoupling control parameters of the current injection from those of selectivity. We demonstrate experimentally structures down to 40nm-size, featuring a high-drive current of similar to 1MA/cm(2), high current-voltage half-bias nonlinearity exceeding 6.10(3) at maximum current drive and very good reliability of > 10(7) cy endurance, with limited degradation of the selectivity. The selector has below 20nm thickness and it is fully implementable with readily available BEOL CMOS-compatible materials and processes.