Browsing by Author "Zhang, Xin-Quan"

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A gate-free monolayer WSe2 pn diode
(2018-08-07)
Chen, Jhih-Wei
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Lo, Shun-Tsung
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Ho, Sheng-Chin
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Wong, Sheng-Shong
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Vu, Thi-Hai-Yen
Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron microspectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron-photon toolbox and pave the way to develop laterally 2D electronics and photonics.
Monolayer Semiconductor Surface-Emitting Lasers Using 2D Dark Plasmonic Cavities
(2018-01-01)
Wang, Chun-Yuan
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Shi, Jinwei
;
Raja, Soniya S.
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Chen, Chun-An
;
Zhang, Xin-Quan
We demonstrated a low-threshold lasing from a monolayer gain medium which is made possible due to 2D feedback mechanism via strong exciton-SPP coupling in both real space and a wide range of momentum space.
Phase-driven magneto-electrical characteristics of single-layer MoS2
(2016)
Yang, Chao-Yao
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Chiu, Kuan-Chang
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Chang, Shu-Jui
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Zhang, Xin-Quan
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Liang, Jaw-Yeu
Magnetism of the MoS2 semiconducting atomic layer was highlighted for its great potential in the applications of spintronics and valleytronics. In this study, we demonstrate an evolution of magneto-electrical properties of single layer MoS2 with the modulation of defect configurations and formation of a partial 1T phase. With Ar treatment, sulfur was depleted within the MoS2 flake leading to a 2H (low-spin) -> partial 1T (high-spin) phase transition. The phase transition was accompanied by the development of a ferro-magnetic phase. Alternatively, the phase transition could be driven by the desorption of S atoms at the edge of MoS2 via O-2 treatment while with a different ordering magnitude in magnetism. The edge-sensitive magnetism of the single-layer MoS2 was monitored by magnetic force microscopy and validated by a first-principle calculation with graded-Vs (sulfur vacancy) terminals set at the edge, where band-splitting appeared more prominent with increasing Vs. Treatment with Ar and O-2 enabled a dual electrical characteristic of the field effect transistor (FET) that featured linear and saturated responses of different magnitudes in the I-ds-V-ds curves, whereas the pristine MoS2 FET displayed only a linear electrical dependency. The correlation and tuning of the Vs-1T phase transition would provide a playground for tailoring the phase-driven properties of MoS2 semiconducting atomic layers in spintronic applications.
Plasmonic Enhancement and Manipulation of Optical Nonlinearity in Monolayer Tungsten Disulfide
(2018-10-01)
Shi, Jinwei
;
Liang, Wei-Yun
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Raja, Soniya S.
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Sang, Yungang
;
Zhang, Xin-Quan
Monolayer transition metal dichalcogenides (TMDCs) have large second-order optical nonlinearity owing to broken inversion symmetry in two-dimensional (2D) crystals. However, despite the strong light-matter coupling in monolayer TMDCs, their nonlinear responses are ultimately limited by subnanometer thickness. Here, a dramatic enhancement of the second-harmonic generation (SHG) is achieved from monolayer tungsten disulfide (WS2) incorporated onto a 2D silver (Ag) nanogroove grating with subwavelength pitch. By tuning surface plasmon mode and second-harmonic frequency in resonance with the C exciton in WS2, a large SHG enhancement factor (approximate to 400) and a large conversion efficiency (approximate to 2.0 x 10(-5)) can be obtained. Furthermore, the azimuthal angle dependence of polarized SHG from monolayer WS2 can be manipulated by the nanogroove plasmonic mode. Based on this property, a polarization-modulated optical encoding technique is demonstrated. The results suggest that 2D TMDC-plasmonic hybrid metasurface structures can provide an ideal integration platform for on-chip nonlinear photonics and plasmonics.