Browsing by Author "Zheng, G. T."

Now showing 1 - 1 of 1

Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors
(2016-01-01)
Liu, P. T.
;
Chang, C. H.
;
Zheng, G. T.
;
Chang, C. C.
;
電子工程學系及電子研究所
We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm(2)/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.