Browsing by Author "Zheng, Jun-Teng"

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Performance Evaluation of Pass-Transistor-Based Circuits using Monolayer and Bilayer 2-D Transition Metal Dichalcogenide (TMD) MOSFETs for 5.9nm Node
(2017-01-01)
Yu, Chang-Hung
;
Zheng, Jun-Teng
;
Su, Pin
;
Chuang, Ching-Te
;
電子工程學系及電子研究所
We comprehensively evaluate and benchmark the performance of pass-transistor logic (PTL) circuits using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on ITRS 2028 node. Our study indicates that the higher V-T of bilayer TMD devices significantly degrades the performance of single pass-transistor based circuits compared with the monolayer counterparts despite the higher mobility of bilayer TMD devices. The effect can be mitigated by using full transmission gate or providing a complementary path.