Browsing by Author "Zhou, Yi-Chun"
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Item type:Item, A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy(2018-04-01) ;Jiang, Jie ;Bitla, Yugandhar ;Peng, Qiang-xiang ;Zhou, Yi-ChunChu, Ying-HaoFlexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.Item type:Item, Flexible ferroelectric element based on van der Waals heteroepitaxy(2017-06-01) ;Jiang, Jie ;Bitla, Yugandhar ;Huang, Chun-Wei ;Thi Hien DoLiu, Heng-JuiWe present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.Item type:Item, Self-Assembled Ferroelectric Nanoarray(2019-01-16) ;Jiang, Jie ;Yang, Qiong ;Zhang, Yi ;Li, Xiao-YuShao, Pao-WenSelf-assembled heteroepitaxial nanostructures have played an important role for miniaturization of electronic devices, e.g., the ultrahigh density ferroelectric memories, and cause for great concern. Our first principle calculations predict that the materials with low formation energy of the interface (E-f) tend to form matrix structure in self-assembled heteroepitaxial nanostructures, whereas those with high E-f form nanopillars. Under the guidance of the theoretical modeling, perovskite BiFeO3 (BFO) nanopillars are swimmingly grown into CeO2 matrix on single-crystal (001)-SrTiO3 (STO) substrates by pulsed laser deposition, where CeO2 has a lower formation energy of the interface (E-f) than BFO. This work provides a good paradigm for controlling self-ssembled nanostructures as well as the application of self-assembled ferroelectric nanoscale memory.Item type:Item, Transparent Antiradiative Ferroelectric Heterostructure Based on Flexible Oxide Heteroepitaxy(2018-09-12) ;Ma, Chun-Hao ;Jiang, Jie ;Shao, Pao-Wen ;Peng, Qiang-XiangHuang, Chun-WeiIn the era of Internet of Things, the demand for flexible and transparent electronic devices has shifted to the forefront of materials science research. However, the radiation damage to key performance of transparent devices under radiative environment remains as a critical issue. Here, we present a promising technology for nonvolatile transparent electronic devices based on flexible oxide heteroepitaxy. A direct fabrication of epitaxial lead lanthanum zirconate titanate on transparent flexible mica substrate with indium tin oxide electrodes is presented. The transparent flexible ferroelectric heterostructures not only retain their superior performance, thermal stability, reliability, and mechanical durability, but also exhibit remarkably robust properties against to a strong radiation exposure. Our study demonstrates an extraordinary concept to realize transparent flexible nonvolatile electronic devices for the design and development of next-generation smart devices with potential application in electronics, automotive, aerospace, and nuclear systems.