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公開日期標題作者
15-三月-2009Carbon attachment on the aluminum nitride gate dielectric in the pentacene-based organic thin-film transistorsZan, Hsiao-Wen; Chou, Cheng-Wei; Wang, Chung-Hwa; Song, Ho-Tsung; Hwang, Jenn-Chang; Lee, Po-Tsung; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-十二月-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-三月-2009Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Displacement Reaction in Pulse Current Deposition of PtRu for Methanol Electro-OxidationHsieh, Yu-Chi; Wu, Pu-Wei; Lu, Yung-Jean; Chang, Yun-Min; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010Effect of Cu-Ion Concentration in Concentrated H3PO4 Electrolyte on Cu Electrochemical Mechanical PlanarizationKung, Te-Ming; Liu, Chuan-Pu; Chang, Shih-Chieh; Chen, Kei-Wei; Wang, Ying-Lang; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-一月-2010Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with CopperChang, Chih-Chieh; Pan, Fu-Ming; Chen, Ching-Wen; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2009Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfacesLin, Yow-Jon; Tsai, Chia-Lung; Liu, W. -R.; Hsieh, W. F.; Hsu, C. -H.; Tsao, Hou-Yen; Chu, Jian-An; Chang, Hsing-Cheng; 光電工程學系; Department of Photonics
2009Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory DevicesHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Growth and Field Emission of Reactive Sputtered Pd-PdO Core-Shell Nanoflakes on PlatinumHuang, Chien-Jung; Pan, Fu-Ming; Tzeng, Tai-Cheng; Li-Chang; Sheu, Jeng-Tzong; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering
1-一月-2010High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device ApplicationHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-二月-2009Improved reliability of Mo nanocrystal memory with ammonia plasma treatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer StructureLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-七月-2010The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitorTrinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K.; 材料科學與工程學系; Department of Materials Science and Engineering
23-十一月-2009Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thicknessChen, W. B.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-四月-2009A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluidChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Li, Hung-Wei; Chen, Shih-Ching; Lu, Jin; Shi, Yi; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-三月-2009Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N-2 and H-2 atmospheresLin, Chia-Hung; Uen, Wu-Yih; Lan, Shan-Ming; Huang, Yen-Chin; Liao, Sen-Mao; Li, Zhen-Yu; Yang, Tsun-Neng; Ku, Chien-Te; Chen, Meng-Chu; Huang, Yu-Hsiang; 光電工程學系; 光電工程研究所; Department of Photonics; Institute of EO Enginerring
9-二月-2009NiSiGe nanocrystals for nonvolatile memory devicesHu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile MemoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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