瀏覽 的方式： 作者 Tsai, M. -J.
顯示 1 到 3 筆資料，總共 3 筆
| 公開日期 | 標題 | 作者 |
| 2009 | Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity | Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Chen, C. W.; Lin, W. P.; Liu, W. H.; Hsu, Y. Y.; Sheu, S. S.; Chiang, P. C.; Chen, W. S.; Chen, F. T.; Lien, C. H.; Tsai, M. -J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2014 | New Observations on the Regular and Irregular Noise Behavior in a Resistance Random Access Memory | Chen, Scott C. H.; Huang, Y. J.; Chung, S. S.; Lee, H. Y.; Chen, Y. S.; Chen, F. T.; Gu, P. Y.; Tsai, M. -J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2013 | The Physical Insights Into an Abnormal Erratic Behavior in the Resistance Random Access Memory | Huang, Y. J.; Chung, Steve S.; Lee, H. Y.; Chen, Y. S.; Chen, F. T.; Gu, P. Y.; Tsai, M. -J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
