標題: | Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity |
作者: | Chen, Y. S. Lee, H. Y. Chen, P. S. Gu, P. Y. Chen, C. W. Lin, W. P. Liu, W. H. Hsu, Y. Y. Sheu, S. S. Chiang, P. C. Chen, W. S. Chen, F. T. Lien, C. H. Tsai, M. -J. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2009 |
摘要: | A 30x30 nm(2) HfOx resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 10(6) cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (R-HIGH) and low resistance (R-LOW) are proposed for the array to ensure a good operation window. A thin A1O(x) buffer layer under the HfOx layer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program(PGM)/erase(ERS) disturb immunity. |
URI: | http://hdl.handle.net/11536/134938 |
ISBN: | 978-1-4244-5639-0 |
期刊: | 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING |
起始頁: | 95 |
結束頁: | + |
顯示於類別: | 會議論文 |