Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity

Abstract

A 30x30 nm(2) HfOx resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 10(6) cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (R-HIGH) and low resistance (R-LOW) are proposed for the array to ensure a good operation window. A thin A1O(x) buffer layer under the HfOx layer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program(PGM)/erase(ERS) disturb immunity.