標題: Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity
作者: Chen, Y. S.
Lee, H. Y.
Chen, P. S.
Gu, P. Y.
Chen, C. W.
Lin, W. P.
Liu, W. H.
Hsu, Y. Y.
Sheu, S. S.
Chiang, P. C.
Chen, W. S.
Chen, F. T.
Lien, C. H.
Tsai, M. -J.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: A 30x30 nm(2) HfOx resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 10(6) cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (R-HIGH) and low resistance (R-LOW) are proposed for the array to ensure a good operation window. A thin A1O(x) buffer layer under the HfOx layer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program(PGM)/erase(ERS) disturb immunity.
URI: http://hdl.handle.net/11536/134938
ISBN: 978-1-4244-5639-0
期刊: 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
起始頁: 95
結束頁: +
Appears in Collections:Conferences Paper