瀏覽 的方式： 作者 Zhang, Yong-Ci
顯示 1 到 4 筆資料，總共 4 筆
| 公開日期 | 標題 | 作者 |
| 1-十月-2019 | The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode | Lin, Shih-Kai; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Chang, Jing-Shuen; Wu, Cheng-Hsien; Tseng, Yi-Ting; Xu, You-Lin; Huang, Kai-Lin; Sun, Li-Chuan; Zhang, Yong-Ci; Chiu, Yu-Ju; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 23-九月-2020 | Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM | Lin, Shih-Kai; Wu, Cheng-Hsien; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Xu, You-Lin; Tseng, Yi-Ting; Wu, Pei-Yu; Tan, Yung-Fang; Sun, Li-Chuan; Zhang, Yong-Ci; Huang, Jen-Wei; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-1970 | Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device | Huang, Wei-Chen; Zheng, Hao-Xuan; Chen, Po-Hsun; Chang, Ting-Chang; Tan, Yung-Fang; Lin, Shih-Kai; Zhang, Yong-Ci; Jin, Fu-Yuan; Wu, Chung-Wei; Yeh, Yu-Hsuan; Chou, Sheng-Yao; Huang, Hui-Chun; Chen, Yan-Wen; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-2019 | Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process | Zheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
