標題: Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
作者: Zheng, Hao-Xuan
Chen, Min-Chen
Chang, Ting-Chang
Su, Yu-Ting
Chen, Wen-Chung
Huang, Wei-Chen
Wu, Pei-Yu
Tan, Yung-Fang
Xu, You-Lin
Zhang, Yong-Ci
Ma, Xiao-Hua
Hao, Yue
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistance;Transistors;Voltage measurement;Electrical resistance measurement;Electric potential;Current measurement;Logic gates;pinchoff;reset process;resistance random access memory (RRAM)
公開日期: 1-十一月-2019
摘要: This article explains the difference in the reset processes between single RRAM and 1T1R RRAM structures. In the single RRAM, as the reset voltage increases, the off-state resistance increases. This is a normal RRAM operation. However, in the 1T1R structure, the reset voltage increases while the OFF-state resistance does not increase. This may be caused by either current or voltage being insufficient to switch the RRAM to its higher resistance state. The measurements of real voltage indicate that the insufficient voltage is in fact the main cause. For the 1T1R RRAM structure, if it is to be reset to a higher resistance state, it is best done by increasing the gate voltage to increase the OFF-state resistance. Therefore, we provide a method to reduce the misjudgment in the array, and it would be beneficial for the development of high-density memory.
URI: http://dx.doi.org/10.1109/TED.2019.2937278
http://hdl.handle.net/11536/153227
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2937278
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 11
起始頁: 4706
結束頁: 4709
顯示於類別:期刊論文