校內出版品;;Campus Publications

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除個人與團體研究發表外，校內單位同時出版了不少學術專業出版物，諸如交通大學出版社與科技法學評論等項。;;Collections from Pulishers in NCTU with Professional Research Publications like NCTU Press, etc.

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Large-Signal Analysis of BARITT Diodes
(交大學刊編輯委員會, 1973-02)
褚冀良
;
施敏
;
J.L.Chu
;
S.M.Sze
Large-signal properties of p+νnp and associated BARITT (Barrier Injection Transit Time)diodes are analyzed. An accurate computer program(Sempak) is used which considers the space-charge balance, dependence of carrier mobilities on impurity concentration and electric field, and carrier generation and recombination. The static properties of BARITT diodes are also considered. General expressions for the flat-band voltage and the differential reactance are obtained. The results show that the p+νnp structure is the best choice which gives optimum performances both in static and microwave characteristics.
Thermionic Injection and Space-Charge-Limited Current in Reach-Through p+np+ Structures
(交大學刊編輯委員會, 1972-01)
褚冀良
;
施敏
;
J.L.Chu
;
S.M.Sze
The current transport mechanisms of reach-through p+np+ and its related structures have been studied.It has been established that when the applied voltages is slightly greater than the reach-through voltage, at which the n layer is completely depleted, the current increases exponentially with voltage by thermionic injection mechanism. The current-voltage relationship is given by J= A*T^2 exp〔-q(VFB -V)^2/4kTVFB〕where A* is the effective Richardson constant, T the temperature, V the applied voltage, and VFB the flat- band voltage defined as qNDL^2/2εS where ND and L are the ionized impurity density and the length of the n layer respectively. When the injected carrier density rises to a value comparable to the impurity density the space- charge-limited (SCL) effect causes the current to vary less rapidly with the applied voltage . The SCL effect is derived based on an accurate expression of the velocity-field relation, i.e., vs/(1+Es/E),where vs is the scattering-limited velocity and Es is the critical field given by the ratio of vs to the low-field mobility. In the hogh current limit we obtain the linear current-voltage expression J≈qNDvs(V/VFB). Experimental structures are made from epitaxial n on p+ silicon substrate with an epitaxial layer thickness of 8.5 μm and doping concentration of 5*10^14cm^-3. The second p+ layer of about 1μm is formed by diffusion. Good agreement have been obtained between the experimental results and theoretical predictions.
Charge Transport and Storage Effect of Gold Ion Implanted Silicon Dioxide MOS Structure
(交大學刊編輯委員會, 1971-04)
陳龍英
;
施敏
;
L.I.Chen
;
S.M.Sze
When gold ions of sufficiently high dose (~10^14 ions/cm^2) are implanted into thermally grown silicon dioxide MOS structure, novel charge transport and memory effect have been observed. For a typical structure with 800Å SiO2 and a projected ion range of 400Å, most of the induced interface states can be annealed out at 400℃. The charge transport in the implanted oxide is found to follow the Frenkel-Poole emission process with trapping energy level at 1.21 eV from the conduction band. Since the charge transport in the inner part of the oxide is by the Fowler-Nordheim tunneling mechanism, the MOS structure is equivalent to a double -layer memory device in which charges can be stored at the trapping centers inside the oxide when voltages are applied . Effects of oxide thickness, ion dose level, annealing temperature, and measurment temperature have been studied. Good agreements have been obtained between experimental results and theoretical predictions.
Microwave Avalanche Diodes__Invited Paper
(交大學刊編輯委員會, 1971-04)
施敏
;
S.M.Sze
;
R.M. Ryder
Microwave avalanche diodes of various types (Impatt, Trapatt, etc.)can generate power sufficient for microwave receivers and some transmitters. This brief review summarizes mechanisms of operation, power output, efficiency, noise,and some important features of design and fabrication .
Silicon p-i-n Photodetector Using Internal Reflection Method
(交大學刊編輯委員會, 1969-04)
李漢生
;
施敏
;
H.S.Lee
;
S.M.Sze
A semiconductor photodetector is proposed which makes use of an internal reflection method to enhance the photoresponse. This method is to let the incident light be multiple-reflected in the detector so that a long distanse is traveled and most of the photon energy is absorbed by the detector. The photodetector is particularly useful in detection of light with wavelengths near the instrinsic absorption edge. Theoretical analysis of photoresponse for a p-i-n pphotodetector is presented. Both the steady-state and time-dependent responses are derived; and the two important limiting cases with zero and infinite surface recombination velicities are taken as examples to illustrate the photoresponse. The photodetectors are fabricated from 4,000Ω-cm, n-type, <111>oriented silicon wafers. Both sides of the wafer are polished with one side inclined half degree with respect to the other. The p+n junction and the ohmic contact are formed by alloy method. The measured photoresponses for wavelengths of 1.0 um and 1.1 um (with absorption coefficients of 100 cm-1 and 3 cm-1 respectively) are in reasonable agreement with the theoretical prediction.
Interface Study of Metal-Semiconductor Systems
(交大學刊編輯委員會, 1969-04)
張俊彥
;
施敏
;
C.Y.Chang
;
S.M.Sze
Interface effect and carrier transport in metal-semiconductor systems have been studied theoretically and experimentally to give a generalized and quantitative presentation. The
Negative Differential Resistance in Reserve-Biased Metal-Semiconductor Systems
(交大學刊編輯委員會, 1969-04)
張俊彥
;
黃政雄
;
施敏
;
C.Y.Chang
;
C.H.Huang
Temperature Dependence of Ionization Rates in GaAs
(交大學刊編輯委員會, 1969-04)
張義昭
;
施敏
;
Y.J.Chang
;
S.M.Sze
The ionization rate is one of the most important material parameters of semiconductors. Its temperature dependence has profound effect on the avalanche breakdown voltage of p-n junctions and on the operational characteristics of many semiconductor devices including IMPATT diodes and avalanche photodetectors (1). The ionization rates of electrons and holes in GaAs are measured here in over the temperature range 77°K to 373°K using photomultiplication method. The results are then compared with the modified Baraff theory(2,3), in order to establish a functional dependence of the ionization rate on temperature.
半導體元件物理學第三版（上冊）
(2008)
施敏
;
NCTU Press
;
國立交通大學出版社
施敏教授從事元件及製程之研究與發展迄今五十餘年，以「非揮發性記憶體」的發明，奠定其半導體界的地位；李明逵教授從事半導體物理元件教學多年。本書是學生學習應用物理、電機電子及材料科學等領域的必備基礎教材，也是工程師及科學界需要知道最新元件和技術發展的最佳參考。本書與第二版的差異為，我們修正並更新了35% 的教材，增加了許多章節討論近年來較重要的題目，如互補式金氧半影像感測器（CMOS image sensors）、鰭式場效電晶體（FinFET）、第三代太陽能電池（3rd generation solar cells）與原子層沉積（atomic layer deposition）。此外，我們刪除或減少了一些較不重要的章節，以維持本書的長度。由於金氧半場效電晶體（MOSFET）對於電子產品的應用愈來愈重要，因此，我們對金氧半場效電晶體與其相關元件的論述增加了兩個章節。此外，在通訊與能源材料方面，我們對光元件的論述亦增加了兩個章節。為了改善每個主題的易讀性，含有研究所程度之數學或物理觀念的章節被移到本書最後的附錄之中。
半導體元件物理學第三版（下冊）
(2009)
施敏
;
伍國?
;
NCTU Press
;
國立交通大學出版社
這本經典的書籍在半導體元件領域中，樹立了先進的研究以及參考的標準，現在第三版的內容徹底更新並將架構重新組織，以反應元件概念以及品質上的巨大進展。第三版維持最詳細且徹底的資料在最重要的半導體元件上，使讀者立即獲得重要的元件物理知識以及詳細的元件特性，包含主要的雙載子、場效、微波、光子以及偵測元件。非常適合作為電機、電子、物理、材料等科系大學高年級生及研究生修習半導體相關課程使用。也適合作為半導體產業工程師與科學家的參考資料，可說是半導體相關領域人員必讀的聖經。本書為施敏教授與Kwok K.Ng 博士所撰寫的「半導體元件物理」(Physics of Semiconductor Devices, Wiley)第三版之中譯本，第一版於1969年問世後就陸續被翻譯成6種語言，施敏教授撰寫第一版時，在短短的一年半當中，讀完兩千篇研究論文，並從中挑出六百篇做重點整理，幾乎看完當時所有的相關論文。第二版於1981年再度問世，在全世界銷售量已超過百萬冊以上，廣為大學、工業以及研究機構所採用，目前在學術界已被引用超過一萬五千次，為當代工程及應用科學領域中被引用最多的文獻。最近發行第三版，與第二版相隔26年，除了保存前二版的精華外，並增加許多符合時代潮流的內容，根據施敏老師的說法：「這26年間的半導體發展並沒有新的元件被商品化的產出，但是所有元件卻是高速地朝輕、薄、短、小，且速度倍增的發展。這次的新書內容超過了百分之五十的更新與重新編排，雖然基本的寫法不變，但其實是更淺顯易懂。基本上，只要讀完這本書的人都可以看得懂專業的論文期刊」。新版的內容包含：將最新的發展徹底更新。新的元件例如三維MOSFETs、MODETs、共振穿隧二極體、半導體偵測器、量子Cascade雷射、單電子電晶體、real-space transfer以及更多的元件。將材料完全重新組織。在每一章的後面設立問題集。所有的圖以最高的品質重新繪製。為了使工程師、科學家、大學教師以及學生了解今日所使用最重要的元件，以及評估未來元件的品質與限制，本書提供了實踐的基礎。

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