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校內出版品;;Campus Publications

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除個人與團體研究發表外，校內單位同時出版了不少學術專業出版物，諸如交通大學出版社與科技法學評論等項。;;Collections from Pulishers in NCTU with Professional Research Publications like NCTU Press, etc.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.S.M.SzeEnd date: 1969

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Now showing 1 - 4 of 4
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    Silicon p-i-n Photodetector Using Internal Reflection Method
    (交大學刊編輯委員會, 1969-04)
    李漢生
    ;
    施敏
    ;
    H.S.Lee
    ;
    S.M.Sze
    A semiconductor photodetector is proposed which makes use of an internal reflection method to enhance the photoresponse. This method is to let the incident light be multiple-reflected in the detector so that a long distanse is traveled and most of the photon energy is absorbed by the detector. The photodetector is particularly useful in detection of light with wavelengths near the instrinsic absorption edge. Theoretical analysis of photoresponse for a p-i-n pphotodetector is presented. Both the steady-state and time-dependent responses are derived; and the two important limiting cases with zero and infinite surface recombination velicities are taken as examples to illustrate the photoresponse. The photodetectors are fabricated from 4,000Ω-cm, n-type, <111>oriented silicon wafers. Both sides of the wafer are polished with one side inclined half degree with respect to the other. The p+n junction and the ohmic contact are formed by alloy method. The measured photoresponses for wavelengths of 1.0 um and 1.1 um (with absorption coefficients of 100 cm-1 and 3 cm-1 respectively) are in reasonable agreement with the theoretical prediction.
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    Interface Study of Metal-Semiconductor Systems
    (交大學刊編輯委員會, 1969-04)
    張俊彥
    ;
    施敏
    ;
    C.Y.Chang
    ;
    S.M.Sze
    Interface effect and carrier transport in metal-semiconductor systems have been studied theoretically and experimentally to give a generalized and quantitative presentation. The
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    Negative Differential Resistance in Reserve-Biased Metal-Semiconductor Systems
    (交大學刊編輯委員會, 1969-04)
    張俊彥
    ;
    黃政雄
    ;
    施敏
    ;
    C.Y.Chang
    ;
    C.H.Huang
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    Temperature Dependence of Ionization Rates in GaAs
    (交大學刊編輯委員會, 1969-04)
    張義昭
    ;
    施敏
    ;
    Y.J.Chang
    ;
    S.M.Sze
    The ionization rate is one of the most important material parameters of semiconductors. Its temperature dependence has profound effect on the avalanche breakdown voltage of p-n junctions and on the operational characteristics of many semiconductor devices including IMPATT diodes and avalanche photodetectors (1). The ionization rates of electrons and holes in GaAs are measured here in over the temperature range 77°K to 373°K using photomultiplication method. The results are then compared with the modified Baraff theory(2,3), in order to establish a functional dependence of the ionization rate on temperature.