校內出版品;;Campus Publications

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除個人與團體研究發表外，校內單位同時出版了不少學術專業出版物，諸如交通大學出版社與科技法學評論等項。;;Collections from Pulishers in NCTU with Professional Research Publications like NCTU Press, etc.

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Large-Signal Analysis of BARITT Diodes
(交大學刊編輯委員會, 1973-02)
褚冀良
;
施敏
;
J.L.Chu
;
S.M.Sze
Large-signal properties of p+νnp and associated BARITT (Barrier Injection Transit Time)diodes are analyzed. An accurate computer program(Sempak) is used which considers the space-charge balance, dependence of carrier mobilities on impurity concentration and electric field, and carrier generation and recombination. The static properties of BARITT diodes are also considered. General expressions for the flat-band voltage and the differential reactance are obtained. The results show that the p+νnp structure is the best choice which gives optimum performances both in static and microwave characteristics.
Thermionic Injection and Space-Charge-Limited Current in Reach-Through p+np+ Structures
(交大學刊編輯委員會, 1972-01)
褚冀良
;
施敏
;
J.L.Chu
;
S.M.Sze
The current transport mechanisms of reach-through p+np+ and its related structures have been studied.It has been established that when the applied voltages is slightly greater than the reach-through voltage, at which the n layer is completely depleted, the current increases exponentially with voltage by thermionic injection mechanism. The current-voltage relationship is given by J= A*T^2 exp〔-q(VFB -V)^2/4kTVFB〕where A* is the effective Richardson constant, T the temperature, V the applied voltage, and VFB the flat- band voltage defined as qNDL^2/2εS where ND and L are the ionized impurity density and the length of the n layer respectively. When the injected carrier density rises to a value comparable to the impurity density the space- charge-limited (SCL) effect causes the current to vary less rapidly with the applied voltage . The SCL effect is derived based on an accurate expression of the velocity-field relation, i.e., vs/(1+Es/E),where vs is the scattering-limited velocity and Es is the critical field given by the ratio of vs to the low-field mobility. In the hogh current limit we obtain the linear current-voltage expression J≈qNDvs(V/VFB). Experimental structures are made from epitaxial n on p+ silicon substrate with an epitaxial layer thickness of 8.5 μm and doping concentration of 5*10^14cm^-3. The second p+ layer of about 1μm is formed by diffusion. Good agreement have been obtained between the experimental results and theoretical predictions.
Charge Transport and Storage Effect of Gold Ion Implanted Silicon Dioxide MOS Structure
(交大學刊編輯委員會, 1971-04)
陳龍英
;
施敏
;
L.I.Chen
;
S.M.Sze
When gold ions of sufficiently high dose (~10^14 ions/cm^2) are implanted into thermally grown silicon dioxide MOS structure, novel charge transport and memory effect have been observed. For a typical structure with 800Å SiO2 and a projected ion range of 400Å, most of the induced interface states can be annealed out at 400℃. The charge transport in the implanted oxide is found to follow the Frenkel-Poole emission process with trapping energy level at 1.21 eV from the conduction band. Since the charge transport in the inner part of the oxide is by the Fowler-Nordheim tunneling mechanism, the MOS structure is equivalent to a double -layer memory device in which charges can be stored at the trapping centers inside the oxide when voltages are applied . Effects of oxide thickness, ion dose level, annealing temperature, and measurment temperature have been studied. Good agreements have been obtained between experimental results and theoretical predictions.
Microwave Avalanche Diodes__Invited Paper
(交大學刊編輯委員會, 1971-04)
施敏
;
S.M.Sze
;
R.M. Ryder
Microwave avalanche diodes of various types (Impatt, Trapatt, etc.)can generate power sufficient for microwave receivers and some transmitters. This brief review summarizes mechanisms of operation, power output, efficiency, noise,and some important features of design and fabrication .
Silicon p-i-n Photodetector Using Internal Reflection Method
(交大學刊編輯委員會, 1969-04)
李漢生
;
施敏
;
H.S.Lee
;
S.M.Sze
A semiconductor photodetector is proposed which makes use of an internal reflection method to enhance the photoresponse. This method is to let the incident light be multiple-reflected in the detector so that a long distanse is traveled and most of the photon energy is absorbed by the detector. The photodetector is particularly useful in detection of light with wavelengths near the instrinsic absorption edge. Theoretical analysis of photoresponse for a p-i-n pphotodetector is presented. Both the steady-state and time-dependent responses are derived; and the two important limiting cases with zero and infinite surface recombination velicities are taken as examples to illustrate the photoresponse. The photodetectors are fabricated from 4,000Ω-cm, n-type, <111>oriented silicon wafers. Both sides of the wafer are polished with one side inclined half degree with respect to the other. The p+n junction and the ohmic contact are formed by alloy method. The measured photoresponses for wavelengths of 1.0 um and 1.1 um (with absorption coefficients of 100 cm-1 and 3 cm-1 respectively) are in reasonable agreement with the theoretical prediction.
Interface Study of Metal-Semiconductor Systems
(交大學刊編輯委員會, 1969-04)
張俊彥
;
施敏
;
C.Y.Chang
;
S.M.Sze
Interface effect and carrier transport in metal-semiconductor systems have been studied theoretically and experimentally to give a generalized and quantitative presentation. The
Negative Differential Resistance in Reserve-Biased Metal-Semiconductor Systems
(交大學刊編輯委員會, 1969-04)
張俊彥
;
黃政雄
;
施敏
;
C.Y.Chang
;
C.H.Huang
Temperature Dependence of Ionization Rates in GaAs
(交大學刊編輯委員會, 1969-04)
張義昭
;
施敏
;
Y.J.Chang
;
S.M.Sze
The ionization rate is one of the most important material parameters of semiconductors. Its temperature dependence has profound effect on the avalanche breakdown voltage of p-n junctions and on the operational characteristics of many semiconductor devices including IMPATT diodes and avalanche photodetectors (1). The ionization rates of electrons and holes in GaAs are measured here in over the temperature range 77°K to 373°K using photomultiplication method. The results are then compared with the modified Baraff theory(2,3), in order to establish a functional dependence of the ionization rate on temperature.

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