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dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLee, C. E.en_US
dc.contributor.authorLin, C. H.en_US
dc.contributor.authorCheng, P. C.en_US
dc.contributor.authorHuang, H. W.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorLeung, K. M.en_US
dc.date.accessioned2014-12-08T15:13:46Z-
dc.date.available2014-12-08T15:13:46Z-
dc.date.issued2007-07-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/22/7/029en_US
dc.identifier.urihttp://hdl.handle.net/11536/10637-
dc.description.abstractIn this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO2 and SiO2, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO2/SiO2 ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO2/SiO2 ODR (at a driving current of 350 mA and with chip size of 1 mm x 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.en_US
dc.language.isoen_USen_US
dc.titleFabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/22/7/029en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume22en_US
dc.citation.issue7en_US
dc.citation.spage831en_US
dc.citation.epage835en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000247401000029-
dc.citation.woscount12-
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