| 標題: | Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector |
| 作者: | Lin, C. H. Yen, H. H. Lai, C. F. Huang, H. W. Chao, C. H. Kuo, H. C. Lu, T. C. Wang, S. C. Leung, K. M. 光電工程學系 Department of Photonics |
| 關鍵字: | light-emitting diode (LED);onmidirectional reflector (ODR);photonic crystal (PC) |
| 公開日期: | 1-五月-2008 |
| 摘要: | An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO2-SiO2 onmidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings. |
| URI: | http://dx.doi.org/10.1109/LPT.2008.921118 http://hdl.handle.net/11536/9410 |
| ISSN: | 1041-1135 |
| DOI: | 10.1109/LPT.2008.921118 |
| 期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
| Volume: | 20 |
| Issue: | 9-12 |
| 起始頁: | 836 |
| 結束頁: | 838 |
| 顯示於類別： | 期刊論文 |
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- Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector / Lin, C. H.;Lai, C. F.;Ko, T. S.;Huang, H. W.;Kuo, H. C.
- High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness / Huang, H. W.;Kuo, H. C.;Lai, C. F.;Lee, C. E.;Chiu, C. W.
- Fabrication and characteristics of thin-film InGaN-GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors / Chiu, C. H.;Kuo, H. C.;Lee, C. E.;Lin, C. H.;Cheng, P. C.
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