標題: Enhanced vertical extraction efficiency from a thin-film InGaN-GaN light-emitting diode using a 2-D photonic crystal and an omnidirectional reflector
作者: Lin, C. H.
Yen, H. H.
Lai, C. F.
Huang, H. W.
Chao, C. H.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
Leung, K. M.
光電工程學系
Department of Photonics
關鍵字: light-emitting diode (LED);onmidirectional reflector (ODR);photonic crystal (PC)
公開日期: 1-May-2008
摘要: An InGaN-GaN thin-film vertical-type light-emitting diode with a two-dimensional photonic crystal (PC) on the emitting surface and a TiO2-SiO2 onmidirectional reflector on the bottom was fabricated. The device was investigated by performing a series of experiments and numerical computations. Electroluminescence measurement revealed a strong extraction enhancement in the vertical direction at 433-nm wavelength. The emission spectrum of the light was found to be strongly modified by the PC to have a significantly narrow linewidth of 5 nm. Our experimental results were in accord with those obtained from our numerical findings.
URI: http://dx.doi.org/10.1109/LPT.2008.921118
http://hdl.handle.net/11536/9410
ISSN: 1041-1135
DOI: 10.1109/LPT.2008.921118
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 20
Issue: 9-12
起始頁: 836
結束頁: 838
Appears in Collections:Articles


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