Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 李承士 | en_US |
| dc.contributor.author | 張翼 | en_US |
| dc.date.accessioned | 2014-12-16T06:17:25Z | - |
| dc.date.available | 2014-12-16T06:17:25Z | - |
| dc.date.issued | 2004-10-21 | en_US |
| dc.identifier.govdoc | H01L021/203 | zh_TW |
| dc.identifier.govdoc | H01L021/203 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/106423 | - |
| dc.description.abstract | 本發明砷化鎵元件背面銅金屬化之製作方法，係將砷化鎵元件背面金屬化金屬由金改為銅，由於銅的阻值較低，且散熱與機械強度亦較金優異。因此，以銅作為金屬化金屬之元件，可改善元件的散熱、機械強度、導電度，更可增進元件的特性及可靠度。並藉由鎢(W)、氮化鎢(WN)、氮化鈦鎢(TiWN)等薄膜作為擴散阻障層，有效阻擋銅易擴散入砷化鎵基材而改變元件特性之問題。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 砷化鎵元件背面銅金屬化之製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I222675 | zh_TW |
| Appears in Collections: | Patents | |
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