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dc.contributor.authorHuang, S. C.en_US
dc.contributor.authorLiu, S. C.en_US
dc.contributor.authorLi, A.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.date.accessioned2014-12-08T15:13:55Z-
dc.date.available2014-12-08T15:13:55Z-
dc.date.issued2007-06-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.32.001480en_US
dc.identifier.urihttp://hdl.handle.net/11536/10735-
dc.description.abstractWe demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 mu m laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained. (c) 2007 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleAlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.32.001480en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue11en_US
dc.citation.spage1480en_US
dc.citation.epage1482en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000247756600045-
dc.citation.woscount12-
Appears in Collections:Articles


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