| 標題: | InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers |
| 作者: | Li, A. Liu, S. C. Su, K. W. Liao, Y. L. Huang, S. C. Chen, Y. F. Huang, K. F. 電子物理學系 Department of Electrophysics |
| 公開日期: | 1-Sep-2006 |
| 摘要: | We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained. |
| URI: | http://dx.doi.org/10.1007/s00340-006-2247-5 http://hdl.handle.net/11536/11803 |
| ISSN: | 0946-2171 |
| DOI: | 10.1007/s00340-006-2247-5 |
| 期刊: | APPLIED PHYSICS B-LASERS AND OPTICS |
| Volume: | 84 |
| Issue: | 3 |
| 起始頁: | 429 |
| 結束頁: | 431 |
| Appears in Collections: | Articles |
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- InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers / Lai, HC;Li, A;Su, KW;Ku, ML;Chen, YF
- AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser / Huang, S. C.;Liu, S. C.;Li, A.;Su, K. W.;Chen, Y. F.
- Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser / Huang, Y. P.;Liang, H. C.;Huang, J. Y.;Su, K. W.;Li, A.
- Millijoule intracavity OPO driven by a passively Q-switched Nd:YVO(4) laser with AlGaInAs quantum-well saturable absorber / Huang, Y. P.;Chiang, P. Y.;Chen, Y. F.;Huang, K. F.
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