標題: | InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers |
作者: | Lai, HC Li, A Su, KW Ku, ML Chen, YF Huang, KF 電子物理學系 Department of Electrophysics |
公開日期: | 1-三月-2005 |
摘要: | Received August 6, 2004 A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 mum. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm. was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. (C) 2005 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OL.30.000480 http://hdl.handle.net/11536/13953 |
ISSN: | 0146-9592 |
DOI: | 10.1364/OL.30.000480 |
期刊: | OPTICS LETTERS |
Volume: | 30 |
Issue: | 5 |
起始頁: | 480 |
結束頁: | 482 |
顯示於類別: | 期刊論文 |