InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers

doi:10.1364/OL.30.000480

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, HC	en_US
dc.contributor.author	Li, A	en_US
dc.contributor.author	Su, KW	en_US
dc.contributor.author	Ku, ML	en_US
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Huang, KF	en_US
dc.date.accessioned	2014-12-08T15:19:37Z	-
dc.date.available	2014-12-08T15:19:37Z	-
dc.date.issued	2005-03-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.30.000480	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13953	-
dc.description.abstract	Received August 6, 2004 A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 mum. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm. was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. (C) 2005 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.30.000480	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	5	en_US
dc.citation.spage	480	en_US
dc.citation.epage	482	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000227371800010	-
dc.citation.woscount	9	-
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