InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers

doi:10.1007/s00340-006-2247-5

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Li, A.	en_US
dc.contributor.author	Liu, S. C.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Liao, Y. L.	en_US
dc.contributor.author	Huang, S. C.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:15:49Z	-
dc.date.available	2014-12-08T15:15:49Z	-
dc.date.issued	2006-09-01	en_US
dc.identifier.issn	0946-2171	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/s00340-006-2247-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11803	-
dc.description.abstract	We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.	en_US
dc.language.iso	en_US	en_US
dc.title	InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/s00340-006-2247-5	en_US
dc.identifier.journal	APPLIED PHYSICS B-LASERS AND OPTICS	en_US
dc.citation.volume	84	en_US
dc.citation.issue	3	en_US
dc.citation.spage	429	en_US
dc.citation.epage	431	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000239394200011	-
dc.citation.woscount	7	-
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