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dc.contributor.authorWu, Chia-Tienen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.contributor.authorLin, Chun-Hungen_US
dc.date.accessioned2014-12-08T15:14:13Z-
dc.date.available2014-12-08T15:14:13Z-
dc.date.issued2007-04-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2731659en_US
dc.identifier.urihttp://hdl.handle.net/11536/10884-
dc.description.abstractA self-organized tantalum oxide nanopyramidal structure without tedious semiconductor processing is proposed in this letter. Construction of pyramid arrays with a close-packed periodicity of 200 nm and a height of 200 nm was achieved by the anodic alumina template method directly on the substrate. The tantalum oxide nanopyramidal structure was formed as the underlying tantalum film oxidized and localized precisely by the pore of alumina. The reflectance from the spectroscopic measurement suggests that the nanopyramidal array structures have more broadband antireflection (< 2%) than the nanodot arrays and thin film structures. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSelf-organized tantalum oxide nanopyramidal arrays for antireflective structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2731659en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue17en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000246568600036-
dc.citation.woscount19-
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