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dc.contributor.authorChang, Chun-Weien_US
dc.contributor.authorLee, Huang-Mingen_US
dc.contributor.authorChen, Chang-Youen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorChang, Edward Y.en_US
dc.date.accessioned2014-12-08T15:14:21Z-
dc.date.available2014-12-08T15:14:21Z-
dc.date.issued2007-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.1409en_US
dc.identifier.urihttp://hdl.handle.net/11536/10958-
dc.description.abstractThe diffusion behavior and microstructure evolution of Cu/Ta/GaAs multilayers after thermal annealing are investigated and the mechanism is proposed. A thin 30 nm tantalum layer was sputtered as a diffusion barrier to block Ga and As diffusion into the Cu layer. From the results of sheet resistance measurement, X-ray diffraction analysis, Auger electron spectroscopy and transmission electron microscopy, the Cu/Ta films on GaAs were found to be very stable up to 500 degrees C without Cu migration into GaAs. After annealing al 550 degrees C, the interfacial mixing of Ta with GaAs substrate occurred, resulting in the formation of TaAs2, and the diffusion of Ga through the Ta layer formed the Cu3Ga phase at the Cu/Ta interface. After annealing at 600 degrees C, the reaction of GaAs with Ta and Cu formed TaAs and Cu3Ga owing to Ga migration and interfacial instability.en_US
dc.language.isoen_USen_US
dc.subjectdiffusionen_US
dc.subjectCu/Taen_US
dc.subjectannealingen_US
dc.subjectinterfacial instabilityen_US
dc.titleMechanism of microstructure evolution for the Cu/Ta/GaAs structure after thermal annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.1409en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue4Aen_US
dc.citation.spage1409en_US
dc.citation.epage1414en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000246005200005-
dc.citation.woscount1-
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