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dc.contributor.authorLin, Yen-Kuen_US
dc.contributor.authorNoda, Shuichien_US
dc.contributor.authorLo, Hsiao-Chiehen_US
dc.contributor.authorLiu, Shih-Chienen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorLuc, Quang Hoen_US
dc.contributor.authorChang, Po-Chunen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorSamukawa, Seijien_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:56:17Z-
dc.date.available2017-04-21T06:56:17Z-
dc.date.issued2017-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2634606en_US
dc.identifier.urihttp://hdl.handle.net/11536/133312-
dc.language.isoen_USen_US
dc.titleAlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)en_US
dc.identifier.doi10.1109/LED.2016.2634606en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume38en_US
dc.citation.issue1en_US
dc.citation.spage149en_US
dc.citation.epage149en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000393765800038en_US
Appears in Collections:Articles


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