AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)

doi:10.1109/LED.2016.2634606

標題:	AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
作者:	Lin, Yen-Ku Noda, Shuichi Lo, Hsiao-Chieh Liu, Shih-Chien Wu, Chia-Hsun Wong, Yuen-Yee Luc, Quang Ho Chang, Po-Chun Hsu, Heng-Tung Samukawa, Seiji Chang, Edward Yi 材料科學與工程學系光電系統研究所電子工程學系及電子研究所國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology
公開日期:	一月-2017
URI:	http://dx.doi.org/10.1109/LED.2016.2634606 http://hdl.handle.net/11536/133240
ISSN:	0741-3106
DOI:	10.1109/LED.2016.2634606
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	38
Issue:	1
起始頁:	149
結束頁:	149
顯示於類別：	期刊論文