AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)

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2017-01

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10.1109/LED.2016.2634606

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http://dx.doi.org/10.1109/LED.2016.2634606
 https://ir.lib.nycu.edu.tw/handle/11536/133240

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期刊論文;;Articles

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