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dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorLiang, Shu-Pingen_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2019-04-03T06:42:27Z-
dc.date.available2019-04-03T06:42:27Z-
dc.date.issued2016-04-27en_US
dc.identifier.issn1556-276Xen_US
dc.identifier.urihttp://dx.doi.org/10.1186/s11671-016-1431-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/133653-
dc.description.abstractTo discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.en_US
dc.language.isoen_USen_US
dc.subjectNonvolatile memoryen_US
dc.subjectIllumination effecten_US
dc.subjectGadoliniumen_US
dc.subjectSilicon oxideen_US
dc.subjectRRAMen_US
dc.titleIllumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1186/s11671-016-1431-8en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000374997100002en_US
dc.citation.woscount6en_US
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