標題: Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
作者: Lin, Chun-Chu
Chen, Po-Hsun
Chen, Min-Chen
Chang, Ting-Chang
Lin, Chih-Yang
Zheng, Hao-Xuan
Chen, Chun-Kuei
Huang, Wei-Chen
Chen, Wen-Chung
Huang, Hui-Chun
Tsai, Tsung-Ming
Ma, Xiao-Hua
Hao, Yue
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gadolinium (Gd);indium-tin oxide (ITO);resistive random access memory (RRAM);transparency
公開日期: 1-六月-2019
摘要: This paper investigates material modifications induced by cosputtering indium-tin oxide (ITO) with gadolinium (Gd) at two different power levels. In addition, resistance switching (RS) properties were also verified for use as an insulator in resistive random access memory (RRAM). Comparison of scanning electron microscope (SEM) measurements for the two different cosputtering powers indicated significant changes of the ITO surface. Transparency was also verified by an N&K analyzer measurement, with results indicating a constant in transparency induced by the lower power Gd doping, indicating potential for transparent applications. Furthermore, the mole fraction ratio defined by X-ray photoelectron spectroscopy reveals a Gd2O3 peak, a likely reason for the ITO thin film becoming less conductive. This ITO/Gd:ITO/TiN RRAM can exhibit stable and robust RS characteristics at a lower forming voltage. In addition, lower operating voltages, including both SET and RESET voltages, can be obtained. Reliability tests including endurance and retention were carried out to confirm its RS stability. The RS mechanism of this ITO/Gd:ITO/TiN device was also investigated with the current-voltage (I-V) fitting method. Moreover, temperature effects were also applied to verify the high-resistance state (HRS) mechanism. Finally, a conduction model was proposed to clarify the RS characteristics and confirm that the ITO/Gd:ITO/TiN device is appropriate for data storage.
URI: http://dx.doi.org/10.1109/TED.2019.2912502
http://hdl.handle.net/11536/152343
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2912502
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 6
起始頁: 2595
結束頁: 2599
顯示於類別:期刊論文