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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChiou, Pingen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorYen, Shiang-Shiouen_US
dc.contributor.authorTung, Chien-Hungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorLai, Yu-Chienen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorChang, Chih-Pangen_US
dc.contributor.authorLu, Hsueh-Hsingen_US
dc.contributor.authorChuang, Ching-Sangen_US
dc.contributor.authorLin, Yu-Hsinen_US
dc.date.accessioned2017-04-21T06:55:19Z-
dc.date.available2017-04-21T06:55:19Z-
dc.date.issued2015-06en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2014.2353091en_US
dc.identifier.urihttp://hdl.handle.net/11536/133829-
dc.description.abstractThis paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm(2)/V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.en_US
dc.language.isoen_USen_US
dc.subjectCrystalline phaseen_US
dc.subjectindium-gallium-zinc oxide (IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjecttitanium oxideen_US
dc.titleAmorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applicationsen_US
dc.identifier.doi10.1109/JDT.2014.2353091en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue6en_US
dc.citation.spage506en_US
dc.citation.epage511en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000376179800002en_US
Appears in Collections:Articles