標題: | Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications |
作者: | Yen, Shiang-Shiou Chiu, Yu-Chien Cheng, Chun-Hu Chen, Po-Chun Yeh, Yu-Chen Tung, Chien-Hung Hsu, Hsiao-Hsuan Chang, Chun-Yen 光電系統研究所 電子工程學系及電子研究所 Institute of Photonic System Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Amorphous oxide semiconductor (AOS);Gettering effect;indium-gallium-zinc oxide (IGZO);indium-zinc oxide (IZO);thin-film transistor (TFT);titanium oxide |
公開日期: | 三月-2016 |
摘要: | This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiOx Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm(2)/V.s, and good on/off-current ratio of 5.61 x 10(6). However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process. |
URI: | http://dx.doi.org/10.1109/JDT.2015.2457425 http://hdl.handle.net/11536/133511 |
ISSN: | 1551-319X |
DOI: | 10.1109/JDT.2015.2457425 |
期刊: | JOURNAL OF DISPLAY TECHNOLOGY |
Volume: | 12 |
Issue: | 3 |
顯示於類別: | 期刊論文 |