標題: Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications
作者: Yen, Shiang-Shiou
Chiu, Yu-Chien
Cheng, Chun-Hu
Chen, Po-Chun
Yeh, Yu-Chen
Tung, Chien-Hung
Hsu, Hsiao-Hsuan
Chang, Chun-Yen
光電系統研究所
電子工程學系及電子研究所
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
關鍵字: Amorphous oxide semiconductor (AOS);Gettering effect;indium-gallium-zinc oxide (IGZO);indium-zinc oxide (IZO);thin-film transistor (TFT);titanium oxide
公開日期: 三月-2016
摘要: This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiOx Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm(2)/V.s, and good on/off-current ratio of 5.61 x 10(6). However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.
URI: http://dx.doi.org/10.1109/JDT.2015.2457425
http://hdl.handle.net/11536/133511
ISSN: 1551-319X
DOI: 10.1109/JDT.2015.2457425
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 12
Issue: 3
顯示於類別:期刊論文