Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices

標題:	Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices
作者:	Li, Yiming Chang, Han-Tung Lai, Chun-Ning Chao, Pei-Jung Chen, Chieh-Yang 交大名義發表傳播研究所分子醫學與生物工程研究所電機學院 National Chiao Tung University Institute of Communication Studies Institute of Molecular Medicine and Bioengineering College of Electrical and Computer Engineering
公開日期:	2015
摘要:	In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-kappa/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.
URI:	http://hdl.handle.net/11536/136039
ISBN:	978-1-4673-9894-7
期刊:	2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Appears in Collections:	Conferences Paper