Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Chang, Han-Tung	en_US
dc.contributor.author	Lai, Chun-Ning	en_US
dc.contributor.author	Chao, Pei-Jung	en_US
dc.contributor.author	Chen, Chieh-Yang	en_US
dc.date.accessioned	2017-04-21T06:48:19Z	-
dc.date.available	2017-04-21T06:48:19Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4673-9894-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136039	-
dc.description.abstract	In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-kappa/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.	en_US
dc.language.iso	en_US	en_US
dc.title	Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	分子醫學與生物工程研究所	zh_TW
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Communication Studies	en_US
dc.contributor.department	Institute of Molecular Medicine and Bioengineering	en_US
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000380472500221	en_US
dc.citation.woscount	0	en_US
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