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dc.contributor.authorLin, Shih-Lien_US
dc.contributor.authorTseng, Hung-Rueien_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorChen, Yin-Hanen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2017-04-21T06:48:27Z-
dc.date.available2017-04-21T06:48:27Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-4208-4en_US
dc.identifier.issn2378-8593en_US
dc.identifier.urihttp://hdl.handle.net/11536/136065-
dc.description.abstractThe charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.en_US
dc.language.isoen_USen_US
dc.subjectsimulationen_US
dc.subjectcharge collection probabilityen_US
dc.subjectphotovoltaic cellsen_US
dc.subjectGalluim Arsenideen_US
dc.subjectSiliconen_US
dc.subjectMATLAB (R)en_US
dc.titleSimulation of Charge Collection Probability in GaAs and Si Solar Cells from External Quantum Efficiencyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 International Symposium on Next-Generation Electronics (ISNE)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000380530500067en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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