量子點中間能帶之雙接面太陽能電池之數值分析

Abstract

中間能帶太陽能電池（IBSC）是一種新穎的想法，IBSC理論上的光電轉換效率（PCE）可以達到63.1％，主要由於它擁有三個頻段的吸收。一種實現IBSC的方法為將量子點（QD）材料置入單能隙的材料中形成QD/阻隔層的結構，當阻隔層夠狹窄，則能帶上會有三個能帶：導帶（CB），價帶（VB）和中間帶（IB）。 在這篇論文中，我們提出量子點嵌入雙接面太陽能電池的設計和數值研究。我們使用MATLAB®平台建立了電池模型。 模擬的方法包括使用光場傳輸矩陣模擬IBSC異質多層反射，自由電子捕捉機率和近似漂移擴散法計算可萃取到外部的電流。最後的模擬結果顯示在一個太陽強度下，理想的InGaP / GaAs+的InAs量子點雙接面電池的PCE可以達到46.76％。

Intermediate band solar cell (IBSC) is a novel idea prosed by Marti et al, and the theory claim the power conversion efficiency (PCE) can reach 63.1% due to its three bands absorption. A way to realize IBSC is introducing quantum dot (QD) layer into bulk material, and the QD/barrier layer would behave like to have three bands: conduction band (CB), valence band (VB) and intermediate band (IB). In this thesis, a quantum dot embedded dual-junction solar cell is proposed and studied numerically. We built up the device model by using Matlab® coding. The transmission matrix, collection probability and quasi-drift diffusion methods are applied to simulate the multiple reflection in the IBSC heterostructures. The final simulation shows the PCE for ideal InGaP/GaAs+InAs QD dual junction cell can reach 46.76% under one sun illumination.