Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications

Abstract

In this work, an efficient method is applied to calculate the miniband structure and density of states for well-ordered Ge/Si quantum dot (QD) array fabricated by combining the self-assemble bio-template and damage-free neutral beam etching. Within the envelop-function framework, this computational model surmounts theoretical approximations of the multidimensional Kronig-Penney method and the numerical results provide a guideline for Ge/Si QD solar cell design by simulating the effect of the interdot space and QD\'s dimension on miniband structure and conversion efficiency.