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dc.contributor.authorKao, Ming-Hsuanen_US
dc.contributor.authorYang, Chih-Chaoen_US
dc.contributor.authorWu, Tsung-Taen_US
dc.contributor.authorHsieh, Tung-Yingen_US
dc.contributor.authorHuang, Wen-Hsiehen_US
dc.contributor.authorWang, Hsing-Hsiangen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorYeh, Wen-Kuanen_US
dc.contributor.authorChang, Meng-Fanen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.date.accessioned2017-04-21T06:49:09Z-
dc.date.available2017-04-21T06:49:09Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9478-9en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/136426-
dc.description.abstractLow temperature a-SiGeC thin film photovoltaic (TFPV) ambient light-energy harvesters monolithically integrated with high performance 3D sequentially stackable device were demonstrated in this article. The 3D stackable device with threshold voltage engineering and driving current boosting technologies enable excellent current controllability to achieve low I-off and high I-on operation condition for integrated circuit design. The monolithically stacking of Si thin-film energy harvester, which provide output power (21.93uW/cm(2)) under 450 lux indoor illumination, envisions self-power and low cost 3D(+)IC for internet of things.en_US
dc.language.isoen_USen_US
dc.subjectMonolithic 3Den_US
dc.subjectLow thermal budgeten_US
dc.subjectEenergy harvesteren_US
dc.titlea-SiGeC Thin Film Photovoltaic Enabled Self-Power Monolithic 3D IC Under Indoor Illuminationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000389022000055en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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