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dc.contributor.authorLin, YCen_US
dc.contributor.authorChang, FTen_US
dc.contributor.authorBai, HLen_US
dc.contributor.authorPei, BSen_US
dc.date.accessioned2014-12-08T15:19:21Z-
dc.date.available2014-12-08T15:19:21Z-
dc.date.issued2005-04-11en_US
dc.identifier.issn0304-3894en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jhazmat.2004.12.035en_US
dc.identifier.urihttp://hdl.handle.net/11536/13818-
dc.description.abstractThe performance of a modified design of local condensers to pre-treat a variety of volatile organic compounds (VOCs) emitted from the stripping process of a semiconductor fab was tested in this study. The reaction temperature of the condensers was controlled at around 10 degrees C, it is relatively higher than the traditional condenser reaction temperature. Both VOCs and water vapors were condensed and formed liquid films. This resulted in an enhancement of the VOCs removals, especially for VOCs of high boiling points or solubility. This can help to prevent the follow up zeolite concentrator from damage. The performance of the integrated system of condenser/zeolite concentrator could, therefore, remain highly efficient for a longer operation time. Its annualized cost would also be lower than installing the zeolite concentrator only. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectvolatile organic compoundsen_US
dc.subjectDMDSen_US
dc.subjectDMSen_US
dc.subjectadsorbenten_US
dc.subjectsemiconductoren_US
dc.subjectoptoelectronic industryen_US
dc.subjectTFT-LCDen_US
dc.titleControl of VOCs emissions by condenser pre-treatment in a semiconductor faben_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jhazmat.2004.12.035en_US
dc.identifier.journalJOURNAL OF HAZARDOUS MATERIALSen_US
dc.citation.volume120en_US
dc.citation.issue1-3en_US
dc.citation.spage9en_US
dc.citation.epage14en_US
dc.contributor.department環境工程研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInstitute of Environmental Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000228672200002-
dc.citation.woscount5-
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