Full metadata record
DC FieldValueLanguage
dc.contributor.authorLai, HCen_US
dc.contributor.authorLi, Aen_US
dc.contributor.authorSu, KWen_US
dc.contributor.authorKu, MLen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorHuang, KFen_US
dc.date.accessioned2014-12-08T15:19:37Z-
dc.date.available2014-12-08T15:19:37Z-
dc.date.issued2005-03-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.30.000480en_US
dc.identifier.urihttp://hdl.handle.net/11536/13953-
dc.description.abstractReceived August 6, 2004 A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 mum. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm. was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. (C) 2005 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleInAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.30.000480en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue5en_US
dc.citation.spage480en_US
dc.citation.epage482en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000227371800010-
dc.citation.woscount9-
Appears in Collections:Articles