標題: Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride
作者: Volodin, V. A.
Gritsenko, V. A.
Chin, A.
交大名義發表
National Chiao Tung University
公開日期: 1-May-2018
摘要: Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon-silicon (Si-Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si-Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
URI: http://dx.doi.org/10.1134/S1063785018050279
http://hdl.handle.net/11536/145168
ISSN: 1063-7850
DOI: 10.1134/S1063785018050279
期刊: TECHNICAL PHYSICS LETTERS
Volume: 44
起始頁: 424
結束頁: 427
Appears in Collections:Articles